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价格:电议
所在地:浙江 杭州市
型号:光电二管
更新时间:2017-03-29
浏览次数:2120
公司地址:中国浙江省杭州市西湖区申花路789号剑桥公社D座717室
新势力光电(先生) 经理
杭州新势力光电技术有限公司(www.NewOpto.com) 是一家专业从事激光器、光学测量、光学元器件、太赫兹系统、化学分析仪器的市场推广和技术服务,并且提供系统集成和方案定制的综合性光电技术服务商。公司 秉承“诚信、创新、专业、共赢”理念,努力为中国的光电企业、科研机构、高等院校提供专业而优质的技术、产品和应用。我们专注于激光,致力于成为一家值得 信赖和尊重的光电技术服务商。
新势力光电(www.NewOpto.com)面向光电领域的工业开发和科学研究,供应如下产品与服务:激光器:半导体激光器、固体激光器、气体激光器、光纤激光器、窄线宽激光器、可调谐激光器、飞秒激光器、Cobolt激光器、Roithner激光器。光学测量:光束质量分析仪、位敏探测系统、光束准直系统、光谱分析仪器、激光功率计、激光波长计、红外观察仪、透镜分析系统。光学元器件:激光防护眼镜、光电探测器、压力传感器、滤光片、可饱和吸收镜、光源/LED、光纤、光学透镜、SERS拉曼芯片、单光子计数器、体布拉格光栅、激光显示卡。太赫兹系统:Rainbow太赫兹晶体及系统、Batop太赫兹组件及系统、Tydex太赫兹元件。化学分析仪器:Wilks化学分析仪器(InfraSpec VFA-IR光谱仪、InfraCal油脂分析仪、InfraRan气体分析仪、InfraCal Soot Meter烟尘仪)、Scientech电子分析天平。
电话:0571-85152711
传真:0571-85152722
手机:188-5711-5252
400热线:400-007-1064
企业QQ:400-007-1064
邮箱:Sales@NewOpto.com
UV/blue sensitive photodiodes
|
|||||
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
Chip
|
Package
|
Size
|
Area
|
5V
|
410nm 5V 50Ω
|
mm
|
mm2
|
nA
|
ns
|
||
PS1-2
|
TO52
|
1.0x1.0
|
1
|
0.01
|
50
|
PS1-2
|
LCC6.1
|
1.0x1.0
|
1
|
0.01
|
50
|
PC5-2
|
TO5
|
Ø 2.52
|
5
|
0.3
|
150
|
PS7-2
|
TO5
|
2.66x2.66
|
7
|
0.4
|
200
|
PC10-2
|
TO5
|
Ø 3.57
|
10
|
1
|
300
|
PS13-2
|
TO5
|
3.5x3.5
|
13
|
1
|
300
|
PS33-2
|
TO8
|
5.7x5.7
|
33
|
2
|
600
|
PC50-2
|
BNC
|
Ø 7.98
|
50
|
5
|
1000
|
PS100-2
|
BNC
|
10x10
|
100
|
10
|
2000
|
PS100-2
|
CERpin
|
10x10
|
100
|
10
|
2000
|
Band pass filter modules: PC10-2 TO5i with center wavelength 254nm or 300nm or 350nm
|
|||||
Blue/green sensitive photodiodes
|
|||||
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
Chip
|
Package
|
Size
|
Area
|
5V
|
410nm 5V 50Ω
|
mm
|
mm2
|
nA
|
ns
|
||
PC1-6b
|
TO52S3
|
Ø 1.13
|
1
|
0.05
|
10
|
PC5-6b
|
TO5
|
Ø 2.52
|
5
|
0.1
|
20
|
PS7-6b
|
TO5
|
2.7x2.7
|
7
|
0.15
|
25
|
PC10-6b
|
TO5
|
Ø 3.57
|
10
|
0.2
|
45
|
PS13-6b
|
TO5
|
3.5x3.5
|
13
|
0.25
|
50
|
PS33-6b
|
TO8
|
5.7x5.7
|
33
|
0.6
|
140
|
PS100-6b
|
CERpin
|
10x10
|
100
|
1
|
200
|
PS100-6b
|
LCC10S
|
10x10
|
100
|
1
|
200
|
Band pass filter modules: PR20-6b TO5i with center wavelength 488nm or 550nm or 633nm or 680nm
|
|||||
High speed photodiodes (for fast rise times at low reverse voltages)
|
|||||
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
Chip
|
Package
|
Size
|
Area
|
20V
|
850nm 20V 50Ω
|
mm
|
mm2
|
nA
|
ns
|
||
PS0.25-5
|
LCC6.1
|
0.5x0.5
|
0.25
|
0.1
|
0.4
|
PS0.25-5
|
TO52S3
|
0.5x0.5
|
0.25
|
0.1
|
0.4
|
PC0.55-5
|
TO52S1
|
Ø 0.84
|
0.55
|
0.2
|
1
|
PC0.55-5
|
LCC6.1
|
Ø 0.84
|
0.55
|
0.2
|
1
|
PS1-5
|
LCC6.1
|
1.0x1.0
|
1
|
0.2
|
1.5
|
PS1-5
|
TO52S3
|
1.0x1.0
|
1
|
0.2
|
1.5
|
PS7-5
|
TO5
|
2.7x2.7
|
7
|
0.5
|
2
|
PS11.9-5
|
TO5
|
3.45x3.45
|
11.9
|
1
|
3
|
PC20-5
|
TO8
|
Ø 5.05
|
20
|
2
|
3.5
|
PS33-5
|
TO8
|
5.7x5.7
|
33
|
2
|
3.5
|
PS100-5
|
CERpinS
|
10x10
|
100
|
2
|
5
|
PS100-5
|
LCC10S
|
10x10
|
100
|
2
|
5
|
High speed photodiodes for low voltages (for low operating voltages between 3 and 5 V, making them ideal for VIS and NIR applications in conjunction with CMOS components)
|
|||||
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
Chip
|
Package
|
Size
|
Area
|
20V
|
850nm 20V 50Ω
|
mm
|
mm2
|
nA
|
ns
|
||
PS0.25-5t
|
LCC6.1
|
0.5x0.5
|
0.25
|
1
|
0.4
|
PC0.55-5t
|
LCC6.1
|
Ø 0.84
|
0.55
|
5
|
1
|
PC0.55-5t
|
T1 3/4
|
Ø 0.84
|
0.55
|
5
|
1
|
PC0.55-5t
|
T1 3/4 black
|
Ø 0.84
|
0.55
|
5
|
1
|
PS1-5t
|
LCC6.1
|
1.0x1.0
|
1
|
1
|
1
|
IR photodiodes with min. dark current (for low-capacitance light detection as well as for α, β, ϒ and X-radiation detection)
|
|||||
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
Chip
|
Package
|
Size
|
Area
|
10V
|
850nm 10V 50Ω
|
mm
|
mm2
|
nA
|
ns
|
||
PC1-6
|
TO52S1
|
Ø 1.13
|
1
|
0.05
|
10
|
PC1-6
|
TO52S3
|
Ø 1.13
|
1
|
0.05
|
10
|
PC5-6
|
TO5
|
Ø 2.52
|
5
|
0.1
|
13
|
PS7-6
|
TO5
|
2.66×2.66
|
7
|
0.1
|
15
|
PC10-6
|
TO5
|
Ø 3.57
|
10
|
0.2
|
20
|
PS13-6
|
TO5
|
3.5×3.5
|
13
|
0.2
|
20
|
PC20-6
|
TO8
|
Ø 5.05
|
20
|
0.3
|
25
|
PC50-6
|
TO8S
|
Ø 7.98
|
50
|
0.5
|
30
|
PS100-6
|
BNC
|
10×10
|
100
|
0.8
|
50
|
PS100-6
|
CERpinS
|
10×10
|
100
|
0.8
|
50
|
PS100-6
|
LCC10S
|
10×10
|
100
|
0.8
|
50
|
IR photodiodes with fully depletable (very low capacitance levels)
|
|||||
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
Chip
|
Package
|
Size
|
Area
|
10V
|
905nm 10V 50Ω
|
mm
|
mm2
|
nA
|
ns
|
||
PC5-7
|
TO8i
|
Ø 2.52
|
5
|
0.05
|
45
|
PC10-7
|
TO8i
|
Ø 3.57
|
10
|
0.1
|
50
|
PC20-7
|
TO8Si
|
Ø 5.05
|
20
|
0.2
|
50
|
PS100-7
|
LCC10
|
10×10
|
100
|
1.5
|
50
|
QP100-7
|
LCC10
|
10×10
|
4×25
|
0.5
|
50
|
Photodiodes for 1064nm (specifically for laser rangefinders, laser-based targeting systems or any applications using YAG lasers or similar NIR radiation sources)
|
|||||
Type No.
|
Active area
|
Dark current
|
Rise time
|
||
Chip
|
Package
|
Size
|
Area
|
150V
|
1064nm 150V 50Ω
|
mm
|
mm2
|
nA
|
ns
|
||
QP22-Q
|
TO8S
|
Ø 5.3
|
4×5.7
|
1.5
|
5
|
QP45-Q
|
TO8S
|
6.7×6.7
|
4×10.96
|
3
|
5
|
QP154-Q
|
TO1032i
|
Ø 14.0
|
4×38.5
|
10
|
6
|
PIN Series
|
Optimized for
|
Special features
|
Application
|
Series-2
|
200-500 nm
|
UV / Blue enhanced
|
Analytical instruments, readout for scintillators
|
Series-6b
|
400-650 nm
|
Blue / Green enhanced
|
Photometric illuminometer
|
Series-5b
|
360-550 nm
|
High-speed Epitaxy, blue / green enhanced
|
Optical fiber communication, high speed photometry
|
Series-5t
|
400-850 nm
|
High-speed Epitaxy, low voltage (3.5V)
|
|
Series-5
|
450-950 nm
|
High-speed Epitaxy
|
|
Series-6
|
700-950 nm
|
General purpose, low dark current, fast response
|
Precision photometry, analytical instruments
|
Series-7
|
700-1100 nm
|
Low capacity, full depletable
|
High energy physics
|
Series-Q
|
900-1100 nm
|
Enhanced NIR sensitivity, low voltage, full depletable
|
YAG laser detection
|
Series-i
|
600-1700 nm
|
InGaAs photodiodes, high IR sensitivity, low dark current
|
Eye-sate laser detection
|
Series-X
|
Ionizing radiation
|
With or without scintillator, ultra
|
Medical, security, material
|